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(Color online) (a) Schematic structures of single and bilayer dielectric pentacene FETs. (b) The single layer ( SG silica film) FET showed sweeping rate dependent hysteresis, lesser hysteresis with slower sweeping rates. (c) Transfer characteristics of FETs with and without TOX as the blocking layer between gate and SG silica film (measured with sweeping rate of ). was measured separately, while was biased from with and were grounded.
(Color online) Schematic cross section of an organic thin film transistor with sol-gel silica as the dielectric. The minus signs represent volume charges injected and trapped into sol-gel silica from the gate. The plus signs represent the induced positive charges accumulated at the semiconductor interface. The electron trapping results in . The upper part of sol-gel silica has denser structure, thus containing less moisture/–OH bonds.
(Color online) (a) Transfer characteristics of bilayer dielectric pentacene OFET in ambient and vacuum. This phenomenon is reversible upon repeated measurements between ambient and vacuum for thick SG silica film on TOX. The ambient stability is improved with thinner SG silica film . (b) Capacitance-voltage ( characteristics of MIS on -type Si wafer for bilayer structure with thick SG silica and thin SG silica , measured at . (Note: , .)
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