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Statistics of electrical breakdown field in and films from millimeter to nanometer length scales
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10.1063/1.2822420
/content/aip/journal/apl/91/24/10.1063/1.2822420
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2822420
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM topography image taken after a grid on a thick film thermally grown on a Si substrate.

Image of FIG. 2.
FIG. 2.

(Color online) Five superposed nanometric characteristics measured by C-AFM on a MIM structure.

Image of FIG. 3.
FIG. 3.

(Color online) Cumulative probability of breakdown for thick on TiN, comparing macro—(standard capacitors) and nanotesting (C-AFM). Lines are fits to a Weibull distribution [Eq. (1)].

Image of FIG. 4.
FIG. 4.

(Color online) Weibull plot of the breakdown electric field distribution for and for different surface areas of testing, normalized to the largest area .

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/content/aip/journal/apl/91/24/10.1063/1.2822420
2007-12-14
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2822420
10.1063/1.2822420
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