1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Interfacial characteristics and band alignments for gate dielectric on Si passivated substrate
Rent:
Rent this article for
USD
10.1063/1.2822422
/content/aip/journal/apl/91/24/10.1063/1.2822422
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2822422
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) characteristics of GaAs MOS capacitor at for gate dielectric on -type GaAs with and without Si IPL. Inset (a) shows hysteresis characteristics for the same gate stacks. Cross-sectional HR-TEM images of GaAs MOS capacitor with gate dielectric deposited on (b) and (c) Si passivated .

Image of FIG. 2.
FIG. 2.

(Color online) XPS spectra for thin gate stack deposited on with and without Si IPL and annealed at for in ambient. (a) Ga and (b) As spectra for thin . Inset (b) shows Si spectra for the sample with Si IPL.

Image of FIG. 3.
FIG. 3.

(a) As core level, (b) Zr core level, and (c) valence-band spectra of GaAs substrate and films deposited on .

Image of FIG. 4.
FIG. 4.

(a) As core level, (b) Zr core level, and (c) valence-band spectra of GaAs substrate and films deposited on with Si interfacial passivation layer.

Loading

Article metrics loading...

/content/aip/journal/apl/91/24/10.1063/1.2822422
2007-12-10
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial characteristics and band alignments for ZrO2 gate dielectric on Si passivated p-GaAs substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2822422
10.1063/1.2822422
SEARCH_EXPAND_ITEM