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(Color online) (a) characteristics of GaAs MOS capacitor at for gate dielectric on -type GaAs with and without Si IPL. Inset (a) shows hysteresis characteristics for the same gate stacks. Cross-sectional HR-TEM images of GaAs MOS capacitor with gate dielectric deposited on (b) and (c) Si passivated .
(Color online) XPS spectra for thin gate stack deposited on with and without Si IPL and annealed at for in ambient. (a) Ga and (b) As spectra for thin . Inset (b) shows Si spectra for the sample with Si IPL.
(a) As core level, (b) Zr core level, and (c) valence-band spectra of GaAs substrate and films deposited on .
(a) As core level, (b) Zr core level, and (c) valence-band spectra of GaAs substrate and films deposited on with Si interfacial passivation layer.
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