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(Color) Device configuration. Scanning electron micrographs of (a) multiple sensor array and (b) single wire. (c) Schematic of device cross-sectional view with top gate geometry. (d) Schematic of the cross-sectional view of the device, showing reference gate geometry.
(Color) Width dependence of the device characteristics. [(a) and (b)] and vs source drain voltage at different top gate voltage (with step increase) for wires. [(c) and (d)] and vs at different ( with step increase) for wires. (e) Peak position of the peak at for devices with different width. Red points show the simulation results used in the model in Ref. 14. The inset is the differential conductance as the function of source drain voltage at for different wire widths.
(Color) [(a) and (b)] Differential conductance vs time. The phosphate buffer is first injected, followed by a of antibiotin in the same buffer, with data acquisition being stopped for following the injection. The bias is set at and , respectively. (c) Change in the differential conductance of the device introduced by antibiotin at different (bottom axis, with fixed , black solid squares). Red solid triangles are the data at different (top axis, with ). Inset is the signal noise ratio of the device at different . (d) Comparison of conductance change introduced by of reference gate voltage change (black dots, left axis) and of antibiotin solution (red triangles, right axis).
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