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(a) Schematic layer structure of AlN APDs and (b) SEM image of a fabricated AlN APD with in diameter.
Reverse characteristics of diameter AlN APDs in dark and under light illumination. The incident power density at is .
Photocurrent multiplication or gain of an AlN APD with as a function of the reverse bias voltage . increases only slowly at , but increases exponentially at and reaches about 1200 at . The inset is the same plot in the semilog scale.
Reverse bias characteristics of AlN APDs with , 50, and in diameter. The breakdown voltage increases with decreasing device size.
Reverse breakdown voltage and breakdown field as functions of the device area for AlN APDs. The solid lines are the linear least square fits of data. The breakdown field of dislocation-free AlN epilyer ( at ) is about .
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