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AlN avalanche photodetectors
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10.1063/1.2823588
/content/aip/journal/apl/91/24/10.1063/1.2823588
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2823588
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic layer structure of AlN APDs and (b) SEM image of a fabricated AlN APD with in diameter.

Image of FIG. 2.
FIG. 2.

Reverse characteristics of diameter AlN APDs in dark and under light illumination. The incident power density at is .

Image of FIG. 3.
FIG. 3.

Photocurrent multiplication or gain of an AlN APD with as a function of the reverse bias voltage . increases only slowly at , but increases exponentially at and reaches about 1200 at . The inset is the same plot in the semilog scale.

Image of FIG. 4.
FIG. 4.

Reverse bias characteristics of AlN APDs with , 50, and in diameter. The breakdown voltage increases with decreasing device size.

Image of FIG. 5.
FIG. 5.

Reverse breakdown voltage and breakdown field as functions of the device area for AlN APDs. The solid lines are the linear least square fits of data. The breakdown field of dislocation-free AlN epilyer ( at ) is about .

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/content/aip/journal/apl/91/24/10.1063/1.2823588
2007-12-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlN avalanche photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2823588
10.1063/1.2823588
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