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Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
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10.1063/1.2823606
/content/aip/journal/apl/91/24/10.1063/1.2823606
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2823606
/content/aip/journal/apl/91/24/10.1063/1.2823606
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/content/aip/journal/apl/91/24/10.1063/1.2823606
2007-12-11
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2823606
10.1063/1.2823606
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