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Effects of plasma pretreatment on initial reactions of atomic layer deposition TaN barrier layer on SiOC dielectric
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10.1063/1.2824385
/content/aip/journal/apl/91/24/10.1063/1.2824385
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824385
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Models of three clusters: (a) , (b) SiOC–OH, (c) .

Image of FIG. 2.
FIG. 2.

(Color online) Energies of the reaction pathways of R1, R2, and R3.

Image of FIG. 3.
FIG. 3.

(Color online) Optimized geometries of critical points along the reaction pathway of absorption on a surface: (a) reactant complex; (b) absorption state, (c) transition state; (d) product complex.

Image of FIG. 4.
FIG. 4.

(Color online) Energies and optimized geometries of critical points along the reaction pathway of the second half-reaction of ALD TaN on surfaces.

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/content/aip/journal/apl/91/24/10.1063/1.2824385
2007-12-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of NH3 plasma pretreatment on initial reactions of atomic layer deposition TaN barrier layer on SiOC dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824385
10.1063/1.2824385
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