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Temperature-mediated saturation and current-induced recovery of the drift in diodes
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10.1063/1.2824391
/content/aip/journal/apl/91/24/10.1063/1.2824391
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824391
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Injected charge dependence of as a function of stressing temperature for diode D30R. The solid lines represent least squares fits to the data using Eq. (1). (b) Temperature dependence of (blue solid squares, left axis) and (open red circles, right axis) using data collected at along the various traces. EL images of D14L collected following saturation of the drift at 30 and are presented in (c) and (d), respectively.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Dependence of at (blue circles, left axis) on the injected charge for diode D14L. The stressing temperature is presented as the red dashed line (right axis). EL images presented as (b) and (c) were collected at the times labeled b and c, respectively, in (a).

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/content/aip/journal/apl/91/24/10.1063/1.2824391
2007-12-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature-mediated saturation and current-induced recovery of the Vf drift in 4H-SiCp-i-n diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824391
10.1063/1.2824391
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