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Temperature stability of ZnO:Al film properties for poly-Si thin-film devices
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10.1063/1.2824456
/content/aip/journal/apl/91/24/10.1063/1.2824456
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824456

Figures

Image of FIG. 1.
FIG. 1.

The sheet resistance of glass/ZnO:Al/poly-Si (●), glass/ZnO:Al (○) and glass/poly-Si (▵) stacks as a function of the annealing temperature. For reference, of the glass/ZnO:Al layers before annealing is indicated with a dashed line. The poly-Si films were formed by either ALILE or SPC.

Image of FIG. 2.
FIG. 2.

Absorption spectra of ZnO:Al films on glass before (dashed line) and after (solid line) annealing, as well as of a glass/ZnO:Al/poly-Si stack after annealing (solid circles). Annealing was performed at for in ambient (SPC experiments). The arrow indicates the remaining free carrier absorption of the glass/ZnO:Al/poly-Si stack after annealing.

Tables

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Table I.

Resistivity , carrier concentration , and hall mobility of the as deposited ZnO:Al film and ZnO:Al films coated with poly-Si produced by the ALILE and the SPC process.

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/content/aip/journal/apl/91/24/10.1063/1.2824456
2007-12-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature stability of ZnO:Al film properties for poly-Si thin-film devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824456
10.1063/1.2824456
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