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The sheet resistance of glass/ZnO:Al/poly-Si (●), glass/ZnO:Al (○) and glass/poly-Si (▵) stacks as a function of the annealing temperature. For reference, of the glass/ZnO:Al layers before annealing is indicated with a dashed line. The poly-Si films were formed by either ALILE or SPC.
Absorption spectra of ZnO:Al films on glass before (dashed line) and after (solid line) annealing, as well as of a glass/ZnO:Al/poly-Si stack after annealing (solid circles). Annealing was performed at for in ambient (SPC experiments). The arrow indicates the remaining free carrier absorption of the glass/ZnO:Al/poly-Si stack after annealing.
Resistivity , carrier concentration , and hall mobility of the as deposited ZnO:Al film and ZnO:Al films coated with poly-Si produced by the ALILE and the SPC process.
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