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External electroluminescence measurements of avalanche photodiodes
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10.1063/1.2824463
/content/aip/journal/apl/91/24/10.1063/1.2824463
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824463
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Cross-section of silicon complementary metal-oxide semiconductor single-photon avalanche diode used for silicon electroluminescence measurements. (b) Published and experimental luminescence spectra. (c) System absolute collection efficiency.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Cross-section of self-quenched avalanche photodiode. (b) Electroluminescence of the APD, captured with a Coherent Inc. LaserCam III D beam profiler. (c) External electroluminescence spectrum showing expected exponential behavior; inset plotted on linear graph with a peak corresponding to the band gap energy InGaAsP. Ripples result from internal reflections at layer interfaces.

Image of FIG. 3.
FIG. 3.

(Color online) Experimental measurements of absorption.

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/content/aip/journal/apl/91/24/10.1063/1.2824463
2007-12-14
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: External electroluminescence measurements of InGaAs∕InAlAs avalanche photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824463
10.1063/1.2824463
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