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Monolithic integration of InP based heterostructures on silicon using crystalline buffers
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10.1063/1.2824466
/content/aip/journal/apl/91/24/10.1063/1.2824466
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824466
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) RHEED pattern recorded along the [110] azimuth of the (111) surface after the growth of of InP on . (b) RHEED pattern recorded along the [110] azimuth of InP after the growth of of InP. The RHEED pattern presents a reconstruction. (c) Evolution of the lattice mismatch between InP and as a function of the growth duration as extracted from the distance between RHEED diffraction lines.

Image of FIG. 2.
FIG. 2.

(a) High resolution TEM cross-sectional view of the heterostructure. Inset: image obtained by Fourier transform after selecting the 111 reflections spots showing an interfacial dislocation. (b) Weak beam TEM image of the heterostructure.

Image of FIG. 3.
FIG. 3.

(Color online) Room-temperature photoluminescence spectrum of the quantum well.

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/content/aip/journal/apl/91/24/10.1063/1.2824466
2007-12-14
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824466
10.1063/1.2824466
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