1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effect of mechanical strain on mobility of polycrystalline silicon thin-film transistors fabricated on stainless steel foil
Rent:
Rent this article for
USD
10.1063/1.2824812
/content/aip/journal/apl/91/24/10.1063/1.2824812
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824812

Figures

Image of FIG. 1.
FIG. 1.

Poly-Si TFT structure on stainless steel foil.

Image of FIG. 2.
FIG. 2.

Testing of TFTs on steel foil under uniaxial tensile strain applied.

Image of FIG. 3.
FIG. 3.

(a) Transfer characteristics of -channel poly-Si TFTs under tensile strain parallel to the channel. (b) Transfer characteristics of -channel poly-Si TFT under tensile strain parallel to the channel. ( , ).

Image of FIG. 4.
FIG. 4.

Normalized mobilities of -channel and -channel poly-Si TFTs as a function of tensile strain parallel to the channel: (a) for various channel lengths and (b) for various channel widths.

Image of FIG. 5.
FIG. 5.

Normalized mobilities of -channel and -channel poly-Si TFTs (excluding the effect of parasitic series resistance) as a function tensile strain parallel to the channel.

Tables

Generic image for table
Table I.

Poly-Si TFTs characteristics .

Loading

Article metrics loading...

/content/aip/journal/apl/91/24/10.1063/1.2824812
2007-12-12
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of mechanical strain on mobility of polycrystalline silicon thin-film transistors fabricated on stainless steel foil
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824812
10.1063/1.2824812
SEARCH_EXPAND_ITEM