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Systematic study on -type doping control of InN with different Mg concentrations in both In and N polarities
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10.1063/1.2824816
/content/aip/journal/apl/91/24/10.1063/1.2824816
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824816

Figures

Image of FIG. 1.
FIG. 1.

Mott-Schottky plots of ECV data ( spectra) for InN layers with In (a) and N polarities (b) as a function of [Mg]. The rest potential used here is (Ref. 6).

Image of FIG. 2.
FIG. 2.

(Color online) Dependence of sheet carrier concentration on thickness of undoped InN layers for In and N polarities.

Image of FIG. 3.
FIG. 3.

(Color online) Calibrated (solid squares and circles) and directly estimated (open squares and circles) ’s or ’s of InN:Mg layers for In and N polarities as a function of [Mg]. The (open triangles) for -type InN:Mg are also shown. The dotted lines are plotted as eye guide indicating 100% incorporation of Mg acceptors.

Tables

Generic image for table
Table I.

Electron concentrations in InN bulk layers with different thickness , net donor concentration , theoretically predicted and experimental of undoped InN layers with In- (the first five samples from the top) and N-polarities (last four samples).

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/content/aip/journal/apl/91/24/10.1063/1.2824816
2007-12-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Systematic study on p-type doping control of InN with different Mg concentrations in both In and N polarities
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824816
10.1063/1.2824816
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