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Transport properties of field-effect transistor with Langmuir-Blodgett films of dendrimer and estimation of impurity levels
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10.1063/1.2824818
/content/aip/journal/apl/91/24/10.1063/1.2824818
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824818
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Molecular structure of -dendrimer molecule used in this study, (b) structure of LB films of dendrimer, (c) the device structure of the LB film FET, and (d) AFM image of LB films used for the FET device. This AFM image contains a defect in which the surface is not covered with the LB films.

Image of FIG. 2.
FIG. 2.

(a) Output and (b) transfer characteristics for the LB film FET. In (b), the plot at is drawn together with the fitting line with general formula for FET analyses (Ref. 9). (c) plots for the LB film FET. The symbols ● and ◼ refer to the values obtained in increasing and decreasing , respectively.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Schematic energy diagram for the LB film FET. is the Fermi level for the -dendrimer LB films, and at , the Fermi level of electrodes matches with the . (b) plot for the LB FET. (c) plots for the LB and FET.

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/content/aip/journal/apl/91/24/10.1063/1.2824818
2007-12-14
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824818
10.1063/1.2824818
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