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Undoped polythiophene field-effect transistors with mobility of
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10.1063/1.2824845
/content/aip/journal/apl/91/24/10.1063/1.2824845
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824845
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) The output characteristics of pBTTT-C14 transistor with and at room temperature; (inset) device cross section. (b) Transfer characteristics of the same device at .

Image of FIG. 2.
FIG. 2.

(Color online) Plot of the saturation and linear regime mobilities of a series of Pt/pBTTT devices as a function of . Each data point is an average mobility of three devices, with the spread in values given by the error bars. The triangles are the average linear mobilities corrected for the contact effects.

Image of FIG. 3.
FIG. 3.

(Color online) Plot of vs for a series of Au/pBTTT and Pt/pBTTT devices with at an effective gate voltage . The analysis reveals that Pt devices are less affected by contact resistances at short channel devices.

Image of FIG. 4.
FIG. 4.

(Color online) Log-linear plot of the saturation mobilities vs for the Pt/pBTTT and Au/pBTTT set of devices. For comparison, the mobilities for a set of Au/p3HT devices are also included in the plot, showing a similar trend as the Pt devices. The channel lengths corresponding to values are shown on the top axis.

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/content/aip/journal/apl/91/24/10.1063/1.2824845
2007-12-14
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2824845
10.1063/1.2824845
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