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extrapolated hole storage time in quantum dots
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Image of FIG. 1.
FIG. 1.

Charge-selective DLTS spectra of thermally activated hole emission from different energy levels of InAs QDs across an barrier. The spectra are vertically shifted for clarity. The inset shows a sketch of the sample structure.

Image of FIG. 2.
FIG. 2.

Thermal activation energies obtained from Arrhenius plots of the DLTS spectra in Fig. 1.

Image of FIG. 3.
FIG. 3.

A capacitance transient at for hole emission from the ground state of the QD ensemble . The black solid line is a monoexponential fit yielding a time constant of .

Image of FIG. 4.
FIG. 4.

Dependence of the hole storage time on the localization energy for a variety of QD systems. The solid line is a fit to the experimental data (full circles). The open circles are estimated storage times for the labeled material systems according to the calculated localization energies and the fit.


Generic image for table
Table I.

Measured hole localization energies and storage times at room temperature for holes in different QD material systems.

Generic image for table
Table II.

Hole localization energies in different Sb-based QDs calculated by eight-band theory. The storage time is estimated according to the fit of the experimental data in Fig. 4.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 106years extrapolated hole storage time in GaSb∕AlAs quantum dots