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Charge-selective DLTS spectra of thermally activated hole emission from different energy levels of InAs QDs across an barrier. The spectra are vertically shifted for clarity. The inset shows a sketch of the sample structure.
Thermal activation energies obtained from Arrhenius plots of the DLTS spectra in Fig. 1.
A capacitance transient at for hole emission from the ground state of the QD ensemble . The black solid line is a monoexponential fit yielding a time constant of .
Dependence of the hole storage time on the localization energy for a variety of QD systems. The solid line is a fit to the experimental data (full circles). The open circles are estimated storage times for the labeled material systems according to the calculated localization energies and the fit.
Measured hole localization energies and storage times at room temperature for holes in different QD material systems.
Hole localization energies in different Sb-based QDs calculated by eight-band theory. The storage time is estimated according to the fit of the experimental data in Fig. 4.
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