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Plan views of the samples. [(a)–(c)] show plan views and important parameters of patterns A–C, respectively.
Cross-sectional scanning electron microscopy image of the edge of series II pattern A, which was taken from the position marked by the broken circle in Fig. 1(a).
PL spectrum for the center position of series II pattern A.
Laser power dependence of PL spectrum for series II pattern A. Sample temperature .
Sample temperature dependence of PL spectrum for series II pattern A. Laser power .
Band gap narrowing dependence on the SOI thickness, SiN thickness, and pattern shape.
Important parameters of four series samples.
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