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Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition
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10.1063/1.2825271
/content/aip/journal/apl/91/24/10.1063/1.2825271
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2825271

Figures

Image of FIG. 1.
FIG. 1.

Plan views of the samples. [(a)–(c)] show plan views and important parameters of patterns A–C, respectively.

Image of FIG. 2.
FIG. 2.

Cross-sectional scanning electron microscopy image of the edge of series II pattern A, which was taken from the position marked by the broken circle in Fig. 1(a).

Image of FIG. 3.
FIG. 3.

PL spectrum for the center position of series II pattern A.

Image of FIG. 4.
FIG. 4.

Laser power dependence of PL spectrum for series II pattern A. Sample temperature .

Image of FIG. 5.
FIG. 5.

Sample temperature dependence of PL spectrum for series II pattern A. Laser power .

Image of FIG. 6.
FIG. 6.

Band gap narrowing dependence on the SOI thickness, SiN thickness, and pattern shape.

Tables

Generic image for table
Table I.

Important parameters of four series samples.

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/content/aip/journal/apl/91/24/10.1063/1.2825271
2007-12-14
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2825271
10.1063/1.2825271
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