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Ultrafast carrier dynamics in band edge and broad deep defect emission ZnSe nanowires
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10.1063/1.2825290
/content/aip/journal/apl/91/24/10.1063/1.2825290
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2825290
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Time-resolved induced absorption for ZnSe nanowires grown under near stoichiometric conditions. The sample is excited at and probed using white light continuum generation. The inset shows the various relaxation rates for the different probing wavelengths.

Image of FIG. 2.
FIG. 2.

(Color online) Time-resolved induced absorption for ZnSe nanowires grown under Se-rich conditions. The sample is excited at and probed using white light continuum generation. The various relaxation rates are shown in the inset.

Image of FIG. 3.
FIG. 3.

(Color online) Time-resolved induced absorption for ZnSe nanowires grown under Zn-rich conditions. The sample is excited at and probed using white light continuum generation. The various relaxation rates are shown in the inset.

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/content/aip/journal/apl/91/24/10.1063/1.2825290
2007-12-14
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast carrier dynamics in band edge and broad deep defect emission ZnSe nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2825290
10.1063/1.2825290
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