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(a) Valence and conduction bands of the isolated PbS CQD film (calculated from the electron affinity of bulk PbS and the energy gap of the CQD film) and the Fermi energy of the Al contact [located by the metal work function ]. The inset shows a schematic view of the CQD Schottky barrier device architecture. (b) Energy bands near the CQD Schottky barrier at zero applied bias (the potential energy scale applies only to the neutral region of the PbS CQD film). See Table I for a description of the Schottky barrier parameters.
(a) Measured current-voltage characteristics of sample A at 150, 200, 250, and , and fits of Eq. (1) to the exponential portion of the forward bias currents. (b) Saturation current density vs for samples A, B, and C.
Measured capacitance as a function of bias for samples A, B, and C. Measurements were performed with a probe signal modulated at .
CQD Schottky barrier parameters.
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