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Improved electrical performances of plasma-enhanced atomic layer deposited films by adopting plasma
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10.1063/1.2825272
/content/aip/journal/apl/91/25/10.1063/1.2825272
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/25/10.1063/1.2825272
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HRTEM micrographs of the films grown with [(a) and (b)] and [(c) and (d)] plasma before and after PDA, respectively.

Image of FIG. 2.
FIG. 2.

(Color online) AES depth profiles of the films grown with [(a) and (b)] and [(c) and (d)] plasma before and after PDA, respectively.

Image of FIG. 3.
FIG. 3.

C [(a) and (b)] and N [(c) and (d)] core level XP spectra of the films grown with and plasma before and after PDA, respectively. Inset figure of (d) shows the chemical structure of Taimata®.

Image of FIG. 4.
FIG. 4.

(Color online) Ta core level XP spectra of the films grown with [(a) and (b)] and [(c) and (d)] plasma before and after PDA, respectively. (e) and (f) show the Si spectra with and plasma before and after PDA, respectively.

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/content/aip/journal/apl/91/25/10.1063/1.2825272
2007-12-17
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar∕H2 plasma
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/25/10.1063/1.2825272
10.1063/1.2825272
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