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Nonpolar -plane thin film GaN and light-emitting diodes on substrates
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10.1063/1.2825419
/content/aip/journal/apl/91/25/10.1063/1.2825419
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/25/10.1063/1.2825419
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic illustration of the nonpolar -plane GaN-based LED structure on (100).

Image of FIG. 2.
FIG. 2.

(a) X-ray diffraction spectrum of MOCVD grown -plane GaN on (100) substrate. (b) PL from -plane GaN at . (c) The surface morphology of -plane GaN on .

Image of FIG. 3.
FIG. 3.

The measured characteristics of -plane LEDs at room temperature. The inset shows the fitting results (line) with experimental data (open circles) using scale.

Image of FIG. 4.
FIG. 4.

(a) EL spectra under different injection currents of -plane LEDs at room temperature. (b) The EL peak wavelength (triangle) and light output intensity (square) vs injection currents. The dash line is guide for the eyes and the solid lines are fitting results.

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/content/aip/journal/apl/91/25/10.1063/1.2825419
2007-12-18
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonpolar m-plane thin film GaN and InGaN∕GaN light-emitting diodes on LiAlO2(100) substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/25/10.1063/1.2825419
10.1063/1.2825419
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