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(Color online) The heating setup and the temperature landscape. The source contact is warmed with a voltage-balanced heating current and can be biased for thermocurrent measurements. Electron transport through the quantum dot is determined by the local temperatures of the source and drain sides of the dot, .
(Color online) A plot of (red) and (blue) as a function of bias voltage at a fixed gate voltage, as indicated by the horizontal dashed line in Fig. 3. The temperature rise (green) is calculated via Eq. (7). Insets: the position of the resonant tunneling energy of the dot with respect to the electrochemical potentials in the leads. In this model, we used a transmission function consisting of Lorentzians with a FWHM of equally spaced by and , , , and .
(Color online) The calculated temperature rise as a function of bias and gate voltages for a single Coulomb blockade diamond. In the regions indicated, either the source or drain electrochemical potential, but not both, is within a few of a resonant energy of the dot. Our assumptions are fulfilled in these regions, and the simulation produces temperature plateaus predicting the correct . Figure 2 shows a slice at gate voltage, as indicated by the dashed line.
(Color online) The calculated temperature rises as a function of . The calculated values agree well with the expected values (solid lines) up to nearly . Inset: the percent error as a function of , the full width at half maximum (FWHM) of the transmission function, in Eq. (1). The error is within 1% over an order of magnitude in . Here, is and is .
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