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Cross-sectional TEM images of the nanocrystals embedded in dielectric matrix: (a) with annealing at for ; (b) with annealing at for , where the average nanocrystal size was and obviously visible lattice fringes indicated crystallization of nanocrystals.
Ideal energy band diagram for nanocrystal SONOS-type structures.
(a) Programming speed characteristics of nanocrystal flash memory devices with different programming conditions as a function of time. (b) The erasing speed characteristics of the nanocrystal memory cell at different erasing voltages.
Retention characteristics of nanocrystal flash memory devices with different RTA treatments and programming states.
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