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Low temperature grown carbon nanotube interconnects using inner shells by chemical mechanical polishing
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10.1063/1.2824390
/content/aip/journal/apl/91/26/10.1063/1.2824390
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/26/10.1063/1.2824390
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Processing of CNT via for electrical properties. (a) First process without CMP. (b) Second process with CMP.

Image of FIG. 2.
FIG. 2.

[(a) and (b)] SEM images of CNT grown at in via holes. (c) High magnification TEM image of CNT grown at before CMP. [(d) and (e)] SEM images of planar CNT vias after CMP.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Current-voltage characteristics of CNT vias of in diameter. (b) Comparison of the via resistance between CNTs with and without CMP. (c) Cross-sectional image of CNT vias and increase in carrier paths by CMP. The red solid lines and black dotted lines show the graphite shells of MWCNTs which do and do not act as carrier paths, respectively. (d) The improvement of via resistance of CNT via with CMP by annealing.

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/content/aip/journal/apl/91/26/10.1063/1.2824390
2007-12-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature grown carbon nanotube interconnects using inner shells by chemical mechanical polishing
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/26/10.1063/1.2824390
10.1063/1.2824390
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