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Investigation on switching kinetics in epitaxial ferroelectric thin films: Role of the 90° domain walls
5.V. Nagarajan, A. Roytburd, A. Stanishevsky, S. Prasertchoung, T. Zhao, L. Chen, J. Melngailis, O. Auciello, and R. Ramesh, Nat. Mater. 2, 43 (2003).
7.A. Roelofs, N. A. Pertsev, R. Waser, F. Schlaphof, L. M. Eng, C. Ganpule, V. Nagarajan, and R. Ramesh, Appl. Phys. Lett. 80, 1424 (2002).
9.90° domain formation in tetragonal PZT films takes place when the films are cooled down from the deposition temperature to room temperature through the cubic-to-tetragonal phase transformation.
18.NLS model was proposed by assuming an ensemble of elementary regions, which could be switched independently and instantly after nucleation. NLS model has a high voltage and a low temperature limit of validity. At high voltages, nucleation barrier becomes negligible and the waiting times become unique. At low temperature, the speed of domain wall motion becomes dominated. The remarkable feature of NLS model is that polarization increases linearly with log-scale time between the lower and upper limits of the waiting time spectrum and the slopes decrease with field due to the widening of the waiting time distribution.
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