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Stress-induced band gap tuning in ⟨112⟩ silicon nanowires
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10.1063/1.2826267
/content/aip/journal/apl/91/26/10.1063/1.2826267
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/26/10.1063/1.2826267
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Electronic energy bands of SiNWs with different percentages of lattice constant compression or expansion: (a) 8% compression, (b) 5% compression, (c) 2.5% compression, (d) no change, and (e) 2.5% expansion. The densities of states (DOSs; the peak width for broadening is ) of (a) and (e) are also provided.

Image of FIG. 2.
FIG. 2.

The difference of the energy at point and that at the minimum at or near point ( in Fig. 1) at the bottom of the conduction band vs axial change in lattice constant.

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/content/aip/journal/apl/91/26/10.1063/1.2826267
2007-12-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stress-induced band gap tuning in ⟨112⟩ silicon nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/26/10.1063/1.2826267
10.1063/1.2826267
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