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(Color online) (a) Low temperature photoluminescence spectra as a function of excitation power, from (spot size of ). (b) The PL peak energy positions lie on a straight line against the third root of the excitation power. (c) Double logarithmic plot of the integrated PL intensity.
(Color online) Band energy diagram deduced from the PL transition energies obtained at and taking into account electron accumulation. The line up of the strained GaSb layers has been taken from Pryor and Pistol (Ref. 11).
(Color online) (a) Temperature dependence of the photoluminescence. (b) Arrhenius plot of the integrated PL intensity. The activation energies for each band are derived from the slope at high temperatures (solid lines).
(Color online) (a) Comparison of the PC of the GaSb QDs sample and the reference GaAs sample at room temperature. The inset shows the curve of the device under illumination at RT. (b) Bias dependence of the PC. The inset shows the suggested optical transitions.
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