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Fabrication of alloy nanowire field-effect transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color) (a) Scanning electron microscope image of nanowires (b) Transmission electron microscope images of individual nanowires. Inset is a high-resolution image from the middle section of a nanowire, showing the crystal orientation along the nanowire length is [111]. (c) Energy dispersive x-ray (EDX) spectra collected from individual nanowires of 10 and diameter. Inset is a TEM image of nanowires of 10 and diameter, and the EDX spectra were collected from different positions within the individual nanowires as marked by .

Image of FIG. 2.
FIG. 2.

(Color) Variation in the Ge content in the nanowires of in diameter with the relative pressure ratio in the total pressure. The inset shows the corresponding energy dispersive x-ray spectra in the main panel.

Image of FIG. 3.
FIG. 3.

(Color) (a) Schematics of micro-Raman scattering setup in this study. A typical bright field optical microscope image of individual nanowire dispersed on glass substrates is shown at the right, where the sides of a square are . (b) Micro-Raman scattering spectra of individual nanowires of in diameter for various Ge compositions. Two vertical lines (solid and dotted) define the peak positions of Si–Si and Ge–Ge from the pure Si and Ge nanowires.

Image of FIG. 4.
FIG. 4.

(Color) Current -voltage characteristics recorded on (a) a thick B-doped and (b) a thick P-doped nanowire at various gate voltages . The lower inset of (a) is a scanning electron micrograph of a representative nanowire FET along with a simplified measurement scheme. A dotted arrow represents the direction of positively increasing gate voltages. The upper insets are at . The arrows represent the sweep direction of gate voltage.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of Si1−xGex alloy nanowire field-effect transistors