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Terahertz photomixing in high energy oxygen- and nitrogen-ion-implanted GaAs
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Concentration of ions vs depth. If multiplied by the dose in , this yields the ion concentration in . In all cases the peak is situated deeper than the optical absorption length. (b) Concentration of defects vs depth in the same units as (a). The peak coincides with that of the ion concentration. Note that defect concentration is around three orders of magnitude larger than the ion concentration in the first micron. The ion and defect concentrations were computed by stopping and range of ions in matter, where a Monte-Carlo simulation of ions was performed.

Image of FIG. 2.
FIG. 2.

(Color) (a) curves at different implantation energies and doses. The photocurrent has been calculated from the measured current under illumination by subtracting the dark current. This operation was necessary only for samples with doses above since, for lower doses, the dark current was negligible (under for all bias voltage conditions). In (b)–(d), the terahertz power as a function of the photocurrent is represented. Note: the noise floor of our terahertz power detector was .

Image of FIG. 3.
FIG. 3.

(Color) (a) rf power vs frequency for different doses and energies. The bias voltage was and the photocurrent . (Inset) By fitting the theoretical curve Eq. (1) to the measured data, the effective carrier lifetime was estimated. The fits were calculated for a MSM structure capacity of , yielding a bandwidth of for the constant.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz photomixing in high energy oxygen- and nitrogen-ion-implanted GaAs