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Enhanced Pockels effect in superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer
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10.1063/1.2759267
/content/aip/journal/apl/91/3/10.1063/1.2759267
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/3/10.1063/1.2759267
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) STEM images of (a) sample 1 with Al mole fraction of 0.3 and (b) sample 2 with Al mole fraction of 0.1. The light and dark layers represent GaN and AlGaN, respectively.

Image of FIG. 2.
FIG. 2.

EO response vs the applied electric field for KTP and GaAs.

Image of FIG. 3.
FIG. 3.

Intensity ratios as the function of applied modulation voltage for different samples.

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/content/aip/journal/apl/91/3/10.1063/1.2759267
2007-07-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced Pockels effect in GaN∕AlxGa1−xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/3/10.1063/1.2759267
10.1063/1.2759267
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