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Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric
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10.1063/1.2766667
/content/aip/journal/apl/91/3/10.1063/1.2766667
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/3/10.1063/1.2766667
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Depth profile of atoms in TiN and layers using electron energy-loss spectroscopy (EELS) analysis. After the thermal treatments, the top portion of the TiN was oxidized and became the nitrogen deficient.

Image of FIG. 2.
FIG. 2.

(Color online) Effects of TiN thickness on and and (b) electron mobility at . The TiN devices recovered more quickly than that of TiN. This suggests that the TiN led to higher tensile stress transversely toward the channel than the TiN, which matches the results from the CBED analysis.

Image of FIG. 3.
FIG. 3.

(Color online) TiN film stress as a function of TiN thickness and deposition method. With decreasing TiN thickness, higher tensile stress was applied to Si. (b) CBED diffraction pattern for the TiN. The strains were 0.44% for and for . (c) For the TiN sample, the strain from CBED analysis shows that and were 0.13% and , respectively.

Image of FIG. 4.
FIG. 4.

(Color online) Calculated mobility enhancement based on PR model. between the TiN and the TiN was about 17%, which is closer to the calculated results from the biaxial stress condition in the ⟨110⟩ orientation.

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/content/aip/journal/apl/91/3/10.1063/1.2766667
2007-07-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/3/10.1063/1.2766667
10.1063/1.2766667
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