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(Color online) Depth profile of atoms in TiN and layers using electron energy-loss spectroscopy (EELS) analysis. After the thermal treatments, the top portion of the TiN was oxidized and became the nitrogen deficient.
(Color online) Effects of TiN thickness on and and (b) electron mobility at . The TiN devices recovered more quickly than that of TiN. This suggests that the TiN led to higher tensile stress transversely toward the channel than the TiN, which matches the results from the CBED analysis.
(Color online) TiN film stress as a function of TiN thickness and deposition method. With decreasing TiN thickness, higher tensile stress was applied to Si. (b) CBED diffraction pattern for the TiN. The strains were 0.44% for and for . (c) For the TiN sample, the strain from CBED analysis shows that and were 0.13% and , respectively.
(Color online) Calculated mobility enhancement based on PR model. between the TiN and the TiN was about 17%, which is closer to the calculated results from the biaxial stress condition in the ⟨110⟩ orientation.
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