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Bimetallic oxide nanoparticles as charge trapping layer for nonvolatile memory device applications
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View: Figures


Image of FIG. 1.
FIG. 1.

Typical capacitance-voltage hysteresis characteristics of the memory devices with and without the BONs were obtained. The sweep loops included , , and . The inset figure examines the flatband voltage shift as function of the various sweep loops.

Image of FIG. 2.
FIG. 2.

Morphology and the composition of the BONs were detected by the (a) SEM and (b) EDS of the TEM, respectively. The cross section of the structure was shown in the inset of figure (b). In order to prevent the BONs peeling off the HfON surface, the capping layer was used. Then, the cross section sample was prepared by the focus ion beam. The peaks of the Si, Pd, and Pt were detected due to the capping layer.

Image of FIG. 3.
FIG. 3.

(a) Band diagrams of the electron and hole injection operation using and , respectively, biased at the control gate of the MOS devices with the BONs embedded in the HfON high- gate dielectric were shown. (b) Programing properties of the MOS devices with the BONs under various programing times by and , respectively, were shown.

Image of FIG. 4.
FIG. 4.

Charge retention properties of the MOS devices with the BONs using programing voltages performed at room temperature were shown.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bimetallic oxide nanoparticles CoxMoyO as charge trapping layer for nonvolatile memory device applications