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Improvement of charge storage characteristics on floating gated nonvolatile memory devices with nanoparticles embedded polyimide gate insulator
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10.1063/1.2764558
/content/aip/journal/apl/91/4/10.1063/1.2764558
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/4/10.1063/1.2764558
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of nanoparticles embedded in polyimide layer (a) and molecular structure of BDPA-PDA-type polyimide after curing process (b).

Image of FIG. 2.
FIG. 2.

(Color online) Schematic of fabricated NFGM with nanoparticles embedded in polyimide gate insulator.

Image of FIG. 3.
FIG. 3.

Subthreshold characteristics (a) and output current characteristics (b) of fabricated NFGM with nanoparticles embedded in polyimide gate insulator.

Image of FIG. 4.
FIG. 4.

Threshold voltage shifts of NFGM with nanoparticles (a) and NFGM without nanoparticles embedded in polyimide gate insulator (b).

Image of FIG. 5.
FIG. 5.

Retention time characteristics of fabricated NFGM with nanoparticles embedded in polyimide gate insulator (dot line) and after postannealing in a 3% diluted hydrogen in ambient (solid line).

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/content/aip/journal/apl/91/4/10.1063/1.2764558
2007-07-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of charge storage characteristics on floating gated nonvolatile memory devices with In2O3 nanoparticles embedded polyimide gate insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/4/10.1063/1.2764558
10.1063/1.2764558
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