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Photocurrent analysis of a fast Ge detector on Si
1.S. Luryi, A. Kastalsky, and J. C. Bean, IEEE Trans. Electron Devices 31, 1135 (1984).
3.J. Humlicek, Properties of Silicon Germanium and SiGe: Carbon, EMIS Datareviews Series Vol. 24 (INSPEC, London, 2000), p. 249.
4.R. F. Potter, Handbook of Optical Constants of Solids II (Academic, New York, 1985), p. 465.
10.H. Jorke, Properties of Silicon Germanium and SiGe: Carbon, EMIS Datareviews Series Vol. 24 (INSPEC, London, 2000), p. 287.
11.S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, New York, 2007), p. 80.
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