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GaN ultraviolet photosensors capped by low-temperature aluminium nitride layer
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10.1063/1.2757606
/content/aip/journal/apl/91/5/10.1063/1.2757606
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2757606
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(002) XRD analyses of sensor A and sensor B.

Image of FIG. 2.
FIG. 2.

Typical SPM images of (a) sensor A and (b) sensor B.

Image of FIG. 3.
FIG. 3.

Dark leakage current of the fabricated sensors measured at room temperature. The inset shows the breakdown characteristics of sensor A.

Image of FIG. 4.
FIG. 4.

Spectral responses of the fabricated sensors under applied bias. The inset shows the transmission spectra of both sensors.

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/content/aip/journal/apl/91/5/10.1063/1.2757606
2007-07-31
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaN ultraviolet photosensors capped by low-temperature aluminium nitride layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2757606
10.1063/1.2757606
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