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Rearrangement of the oxide-semiconductor interface in annealed structures
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10.1063/1.2757608
/content/aip/journal/apl/91/5/10.1063/1.2757608
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2757608
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

High resolution Si spectra (AR mode) showing presence of Si suboxide for both as-grown and annealed in Ar atmosphere films deposited on .

Image of FIG. 2.
FIG. 2.

SIMS profiles of (a) Si and (b) H in both as-grown and annealed at samples in Ar atmosphere. The H profile of the as-grown sample was displaced in order to compare the H concentration at the interface with the interfaces.

Image of FIG. 3.
FIG. 3.

HRTEM pictures of (a) as-grown and (b) annealed (, Ar) samples.

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/content/aip/journal/apl/91/5/10.1063/1.2757608
2007-07-31
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rearrangement of the oxide-semiconductor interface in annealed Al2O3∕4H-SiC structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2757608
10.1063/1.2757608
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