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Rearrangement of the oxide-semiconductor interface in annealed structures
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10.1063/1.2757608
/content/aip/journal/apl/91/5/10.1063/1.2757608
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2757608
/content/aip/journal/apl/91/5/10.1063/1.2757608
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/content/aip/journal/apl/91/5/10.1063/1.2757608
2007-07-31
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rearrangement of the oxide-semiconductor interface in annealed Al2O3∕4H-SiC structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2757608
10.1063/1.2757608
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