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Low-voltage-operating complementary inverters with and pentacene transistors on glass substrates
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10.1063/1.2759981
/content/aip/journal/apl/91/5/10.1063/1.2759981
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2759981
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic illustration and (b) photograph of CMOS inverter with and pentacene transistors.

Image of FIG. 2.
FIG. 2.

(Color online) Current characteristics of a TFT in a CMOS inverter. The mobility and threshold voltage are estimated to be and from the transfer characteristics of (b).

Image of FIG. 3.
FIG. 3.

(Color online) Current characteristics of a pentacene TFT in a CMOS inverter. The mobility and threshold voltage are estimated to be and from the transfer characteristics of (b).

Image of FIG. 4.
FIG. 4.

(Color online) (a) Transfer characteristics of a CMOS inverter with and pentacene transistors. High-to-low or low-to-high output switching is clearly seen in forward (black dashed lines) or reverse trace (red lines), respectively. (b) The signal gain of the inverter.

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/content/aip/journal/apl/91/5/10.1063/1.2759981
2007-08-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-voltage-operating complementary inverters with C60 and pentacene transistors on glass substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2759981
10.1063/1.2759981
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