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Inherent linearity in carbon nanotube field-effect transistors
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10.1063/1.2760159
/content/aip/journal/apl/91/5/10.1063/1.2760159
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2760159

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Simple common-source amplifier. Two signals at 193 and are applied to the input of a common-source amplifier. Because the current in the FET is a nonlinear function of the input voltage, a wide variety of different intermodulation products are visible in the output spectrum (see Table I). Each peak is labeled by the order of the derivative in the current-voltage characteristic to which it corresponds. The schematic is shown in the inset.

Image of FIG. 2.
FIG. 2.

(Color online) Current-voltage characteristics of a carbon nanotube FET. The FET was grown on a high-resistivity silicon substrate, using the substrate as a back gate and the -thick thermally grown layer as the gate dielectric. The dots are the experimental data, with each dataset labeled by its corresponding drain-source voltage . The solid lines are the theoretical fit, which uses only two global free parameters.

Tables

Generic image for table
Table I.

Output spectrum of a nonlinear amplifier. By replacing with in Eq. (1), we obtain an infinite sequence of outputs at all frequencies , where and are integers. The sequence of ’s typically converges rapidly to zero, so in the table, we keep only terms up to order .

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/content/aip/journal/apl/91/5/10.1063/1.2760159
2007-08-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inherent linearity in carbon nanotube field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2760159
10.1063/1.2760159
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