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Formation of TaN nanocrystals embedded in silicon nitride by phase separation methods for nonvolatile memory applications
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10.1063/1.2760181
/content/aip/journal/apl/91/5/10.1063/1.2760181
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2760181
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) XPS spectra of the SiN sample and the TaSiN sample annealed at 800 and ; (a) the Si region (b) the Ta region.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM images of the TaSiN sample annealed at (a) for , (b) for . Crystalline dots of TaN formed with the sample annealed at for .

Image of FIG. 3.
FIG. 3.

(Color online) hysteresis of the SONOS-type device with various nitride layers as the charge trapping layer. After biasing the voltage, the device with Ta traps provided the largest shift.

Image of FIG. 4.
FIG. 4.

(Color online) Charge loss characteristics of the SONOS device with a memory window at . The device sample with TaN NCs shows less charge loss compared with the control sample. The inset shows the trap energy levels of the TaN NCs and Ta traps.

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/content/aip/journal/apl/91/5/10.1063/1.2760181
2007-07-30
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of TaN nanocrystals embedded in silicon nitride by phase separation methods for nonvolatile memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2760181
10.1063/1.2760181
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