Full text loading...
(Color online) XPS spectra of the SiN sample and the TaSiN sample annealed at 800 and ; (a) the Si region (b) the Ta region.
Cross-sectional TEM images of the TaSiN sample annealed at (a) for , (b) for . Crystalline dots of TaN formed with the sample annealed at for .
(Color online) hysteresis of the SONOS-type device with various nitride layers as the charge trapping layer. After biasing the voltage, the device with Ta traps provided the largest shift.
(Color online) Charge loss characteristics of the SONOS device with a memory window at . The device sample with TaN NCs shows less charge loss compared with the control sample. The inset shows the trap energy levels of the TaN NCs and Ta traps.
Article metrics loading...