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Random telegraph signals in -type ZnO nanowire field effect transistors at low temperature
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10.1063/1.2761254
/content/aip/journal/apl/91/5/10.1063/1.2761254
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2761254
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) vs characteristics for a -type ZnO nanowire FET device at room temperature at . The inset shows the vs curve in both linear and log scales, showing good -type transistor characteristics with small hysteresis. (b) Normalized drain current noise power spectrum density as a function of the gate bias in the frequency range of at room temperature. is constant at .

Image of FIG. 2.
FIG. 2.

Typical Lorentzian spectrum with corner frequency at when the device is biased at and ; the inset shows the corresponding time domain RTS.

Image of FIG. 3.
FIG. 3.

(a) Raw drain current random telegraph signals for a time interval of observed in the ZnO nanowire FET at as a function of gate bias. The drain bias is kept constant at . (b) Histograms of the time-domain RTS data. The large and small peaks represent the empty or filled trap states, respectively. (c) Band diagram for back gate voltage at with two near interface oxide (border) traps.

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/content/aip/journal/apl/91/5/10.1063/1.2761254
2007-07-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Random telegraph signals in n-type ZnO nanowire field effect transistors at low temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2761254
10.1063/1.2761254
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