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Mesoscopic approach to progressive breakdown in ultrathin layers
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10.1063/1.2761831
/content/aip/journal/apl/91/5/10.1063/1.2761831
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2761831
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Three experimental gate current-time characteristics obtained during a constant voltage stress at . The inset shows a typical fresh characteristic (squares). The solid and dashed lines are obtained using the tunneling model considered in Eq. (1) with and , respectively. In both cases, and .

Image of FIG. 2.
FIG. 2.

Evolution of the total gate current (solid line) and its two components calculated using Eq. (1): the tunneling current (triangles) that flows distributed throughout the gate area and the local current (circles) that flows localized through the PBD path.

Image of FIG. 3.
FIG. 3.

(a) Schematic view of the breakdown path across the dielectric layer. The dashed line corresponds to the SBD conduction mode (lower current), whereas the solid line corresponds to the HBD mode (higher current). and are the potential drops across the PBD path and across its narrowest point, respectively. (b) Energy diagram of the tunneling barrier associated with the transversal confinement. is the oxide thickness.

Image of FIG. 4.
FIG. 4.

Evolution of the power dissipated at the PBD constriction. Notice that as the transmission probability (solid line) approaches unity, the power dissipation inside the constriction (filled squares) decreases. For ballistic conduction , is practically negligible.

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/content/aip/journal/apl/91/5/10.1063/1.2761831
2007-07-31
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mesoscopic approach to progressive breakdown in ultrathin SiO2 layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2761831
10.1063/1.2761831
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