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Three experimental gate current-time characteristics obtained during a constant voltage stress at . The inset shows a typical fresh characteristic (squares). The solid and dashed lines are obtained using the tunneling model considered in Eq. (1) with and , respectively. In both cases, and .
Evolution of the total gate current (solid line) and its two components calculated using Eq. (1): the tunneling current (triangles) that flows distributed throughout the gate area and the local current (circles) that flows localized through the PBD path.
(a) Schematic view of the breakdown path across the dielectric layer. The dashed line corresponds to the SBD conduction mode (lower current), whereas the solid line corresponds to the HBD mode (higher current). and are the potential drops across the PBD path and across its narrowest point, respectively. (b) Energy diagram of the tunneling barrier associated with the transversal confinement. is the oxide thickness.
Evolution of the power dissipated at the PBD constriction. Notice that as the transmission probability (solid line) approaches unity, the power dissipation inside the constriction (filled squares) decreases. For ballistic conduction , is practically negligible.
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