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(Color online) (a) Schematic diagram of the Si-based CDD device structure and (b) scanning electron micrograph picture of the active Coulomb channel of the device. The dotted line drawn above the channel represents the top gate. [(c) and (d)] Gray-scaled current contour plot of each dot measured at as a function of its side-gate voltage and the source-drain bias: (c) dot 1 and (d) dot 2.
(Color online) (a) Gray-scaled current contour plot of two dots coupled in series as a function of two side-gate voltages and for a fixed center gate voltage. The characteristic honeycomb structure for the charge stability diagram of the CDD can be seen. (b) Broadening of the triple points between different charge configurations by applying a finite bias.
(Color online) (a) Gray-scale contour plot of as a function of and the top-gate voltage at a triple point of the honeycomb pattern ( and ) in Fig. 2(a), where the tunnel coupling occurs through the border between (00), (11), and . (b) Conductance trace as a function of top-gate voltage taken from the Coulomb diamond of (a) for a finite bias . (c) Separation in the second set of two peaks plotted as a function of center-gate voltage. The axis on the right displays the scales converted into spin exchange energy of meV.
Schematic diagram illustrating the lateral electron potential energy of the CDD system in a nonequilibrium transport regime, where the ground state is assumed to be the spin singlet. There are four configurations depending on the value of : (a) , (b) , (c) , and (d) .
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