Confinement of fractional quantum Hall states in narrow conducting channels
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(Color online) Top gate channel structures. (a) Lead frame configuration around the top-gate channel, left, also showing contact arrangements for and measurements for current driven from contact 8 to 4; scanning electron micrograph of a channel. (b) D.C. magnetotransport through a channel showing resistance increase at due to diffusive boundary scattering as the channel is narrowed by top-gate biasing, suppressed by magnetic field, with bias ranging from . The temperature is . The large range -field trace extends to opposite field directions; the remaining traces are reflected about for demonstration purposes. (c) resistance values for different top gate biases; several channel widths are marked corresponding to a fit consistent with diffusive boundary scattering in a channel (Ref. 8): .
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(Color online) Evidence for the FQHE state at a filling factor of propagating through channel. (a) Hall and longitudinal resistances for conduction in the bulk. (b) and measurements at a bias of , corresponding to depletion under the gate, and a width of . (c) and measurements at a bias of , corresponding to a width of . (d) and measurements at a bias of , corresponding to a width of . Note the preservation of quantization at in . The Temperature is for all traces.
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