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Type-I optical emissions in quantum dots
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10.1063/1.2764113
/content/aip/journal/apl/91/5/10.1063/1.2764113
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2764113

Figures

Image of FIG. 1.
FIG. 1.

(a) Potential profile of nonrelaxed QDs. For conduction band only points are shown. The arrows indicate the directions of the energy shift when an external biaxial tensile strain is applied. (b) Lateral view of the pressure cell. A mask with a diameter hole was used to select the luminescence at the center of the sample.

Image of FIG. 2.
FIG. 2.

Strain dependence of PL spectra measured at for samples grown at (a) 700 and (b) . The spectra are shifted vertically for ease of viewing. The fine structures in the spectra of (b) are due to the water absorption. (c) The energy shift of the PL peak position vs strain.

Tables

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Table I.

Description of the samples.

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/content/aip/journal/apl/91/5/10.1063/1.2764113
2007-08-02
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Type-I optical emissions in Ge∕Si quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2764113
10.1063/1.2764113
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