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(Color online) AFM images of high Al-content AlGaN superlattices on bulk AlN. The scan area of (a), (b), and (c) is and (d), (e), and (f) . (a) and (d), (b) and (e), and (e) and (f) are taken after the growth of superlattices 1, 2, and 3, respectively. Root-mean-square (rms) roughness from each scan is labeled.
Relations between surface RMS roughness (triangles) from AFM images , FWHMs of XRD rocking curves along (0002) (solid squares), (open squares) diffractions, and the degree of strain relaxation for grown on single superlattice buffers.
Cross sectional TEM images of layers on single SL buffer. (a) Least relaxed sample (sample A). (b) Most relaxed sample (sample D). The dash lines indicate the beginning of AlN homoepitaxial layer.
Performance of deep UV LEDs on bulk AlN. (a) characteristics of diameter device. (b) EL spectra with different currents (from ) for a diameter device.
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