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Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes
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10.1063/1.2766841
/content/aip/journal/apl/91/5/10.1063/1.2766841
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2766841
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM images of high Al-content AlGaN superlattices on bulk AlN. The scan area of (a), (b), and (c) is and (d), (e), and (f) . (a) and (d), (b) and (e), and (e) and (f) are taken after the growth of superlattices 1, 2, and 3, respectively. Root-mean-square (rms) roughness from each scan is labeled.

Image of FIG. 2.
FIG. 2.

Relations between surface RMS roughness (triangles) from AFM images , FWHMs of XRD rocking curves along (0002) (solid squares), (open squares) diffractions, and the degree of strain relaxation for grown on single superlattice buffers.

Image of FIG. 3.
FIG. 3.

Cross sectional TEM images of layers on single SL buffer. (a) Least relaxed sample (sample A). (b) Most relaxed sample (sample D). The dash lines indicate the beginning of AlN homoepitaxial layer.

Image of FIG. 4.
FIG. 4.

Performance of deep UV LEDs on bulk AlN. (a) characteristics of diameter device. (b) EL spectra with different currents (from ) for a diameter device.

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/content/aip/journal/apl/91/5/10.1063/1.2766841
2007-08-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2766841
10.1063/1.2766841
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