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(Color online) characteristics of a QW base heterojunction bipolar transistor (HBT) laser showing the phenomenon of compression in the collector characteristics (and gain , ) above lasing threshold. Base threshold current .
(Color online) Calculated minority carrier (electron) distribution corresponding to the characteristics of Fig. 1 showing the upward tilt in the base carrier profile at the emitter and the deviation from the usual triangular approximation owing to carrier collection and recombination at the nearby QW .
(Color online) Charge analysis determination of base carrier distribution showing the and “triangles” corresponding to carrier diffusion and collection at the QW and at the electrical collector (, ), respectively. The total agrees with Fig. 2 and a steeper tilt from to QW than QW to .
Calculated base carrier lifetime for the tilted base populations of Figs. 2 and 3, the steeper decrease agreeing with the to QW spacing and threshold at .
(Color online) Frequency response of the TL of Figs. 1–4 (, ) at bias current for: (a) a comparison diode of resonator length , and TLs of cavity length (b) and (c) . Note the diode bandwidth of (resonance limited) and the no-resonance TL bandwidth (b) and (c) .
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