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Charge control analysis of transistor laser operation
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10.1063/1.2767172
/content/aip/journal/apl/91/5/10.1063/1.2767172
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767172
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) characteristics of a QW base heterojunction bipolar transistor (HBT) laser showing the phenomenon of compression in the collector characteristics (and gain , ) above lasing threshold. Base threshold current .

Image of FIG. 2.
FIG. 2.

(Color online) Calculated minority carrier (electron) distribution corresponding to the characteristics of Fig. 1 showing the upward tilt in the base carrier profile at the emitter and the deviation from the usual triangular approximation owing to carrier collection and recombination at the nearby QW .

Image of FIG. 3.
FIG. 3.

(Color online) Charge analysis determination of base carrier distribution showing the and “triangles” corresponding to carrier diffusion and collection at the QW and at the electrical collector (, ), respectively. The total agrees with Fig. 2 and a steeper tilt from to QW than QW to .

Image of FIG. 4.
FIG. 4.

Calculated base carrier lifetime for the tilted base populations of Figs. 2 and 3, the steeper decrease agreeing with the to QW spacing and threshold at .

Image of FIG. 5.
FIG. 5.

(Color online) Frequency response of the TL of Figs. 1–4 (, ) at bias current for: (a) a comparison diode of resonator length , and TLs of cavity length (b) and (c) . Note the diode bandwidth of (resonance limited) and the no-resonance TL bandwidth (b) and (c) .

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/content/aip/journal/apl/91/5/10.1063/1.2767172
2007-07-30
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Charge control analysis of transistor laser operation
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767172
10.1063/1.2767172
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