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High-frequency curves of MOS capacitors with different Si-surface nitridations. The insert shows the SIMS depth profiles of Ti and Hf in the NO sample.
TEM image of (a) NO sample and (b) sample, with an interlayer thickness of 13 and , respectively.
Gate leakage current density of MOS capacitors with different Si-surface nitridations.
(a) Increase of gate leakage and (b) shift of flatband voltage of MOS capacitors after a high-field stressing at for , with the samples biased in accumulation.
Electrical properties of MOS capacitors with different Si-surface pretreatments.
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