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Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
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10.1063/1.2767177
/content/aip/journal/apl/91/5/10.1063/1.2767177
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767177

Figures

Image of FIG. 1.
FIG. 1.

High-frequency curves of MOS capacitors with different Si-surface nitridations. The insert shows the SIMS depth profiles of Ti and Hf in the NO sample.

Image of FIG. 2.
FIG. 2.

TEM image of (a) NO sample and (b) sample, with an interlayer thickness of 13 and , respectively.

Image of FIG. 3.
FIG. 3.

Gate leakage current density of MOS capacitors with different Si-surface nitridations.

Image of FIG. 4.
FIG. 4.

(a) Increase of gate leakage and (b) shift of flatband voltage of MOS capacitors after a high-field stressing at for , with the samples biased in accumulation.

Tables

Generic image for table
Table I.

Electrical properties of MOS capacitors with different Si-surface pretreatments.

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/content/aip/journal/apl/91/5/10.1063/1.2767177
2007-07-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767177
10.1063/1.2767177
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