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(a) Scanning electron microscope image of the contacted nanowire (indicated by black arrow) on top of the SiN-covered electrode grid. The scale bar is . (b) Charge stability diagram for the double quantum dot measured at a small bias of . Here, , , and . Charge configurations in the many-electron dots are indicated. The inset shows a small section of a charge stability diagram measured in and , with .
(a) Voltage signal applied to and . The pulse amplitude is for both gates. (b) Stability diagram measured in and during counterclockwise pumping. The frequency is . (c) Pumping at and (d) at . In panels (b)–(d), the applied bias is and .
(a) Current as a function of frequency at points and . The step size in our measurements is and the traces are averages over the nine points in the plane around and , respectively. The dashed lines indicate the ideal slope of one electron per cycle. (b) Number of electrons per cycle at selected frequencies as a function of . Cuts are taken across point and the curves show the average over three curves at , . The gray vertical line labels point .
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