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35% magnetocurrent with spin transport through Si
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10.1063/1.2767198
/content/aip/journal/apl/91/5/10.1063/1.2767198
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767198
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic illustration of the Si spin transport device used in this work (a) and associated conduction band diagram (b). The vertical structure (top to bottom) is undoped -Si. Spin-polarized hot electrons are injected by an emitter voltage from the tunnel junction cathode through the normal-metal anode base and into the conduction band of the thick undoped Si drift layer forming injected current . Detection on the other side is with spin-dependent hot-electron transport through the thin film. Our spin transport signal is the ballistic current transported into the conduction band of the collector .

Image of FIG. 2.
FIG. 2.

(Color online) (a) In-plane spin-valve effect for our silicon spin transport device with emitter tunnel junction bias and at , showing magnetocurrent. (b) Spin precession and dephasing (Hanle effect), measured by applying a perpendicular magnetic field.

Image of FIG. 3.
FIG. 3.

(Color online) (a) In-plane spin-valve effect for the device with emitter bias and at , with magnetocurrent ratio reduced to . (b) for parallel (P) and antiparallel (AP) injector/detector magnetization configurations (open symbols and right axis), and the derived lower bound to electron spin polarization in the conduction band of Si (closed symbol and left axis).

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/content/aip/journal/apl/91/5/10.1063/1.2767198
2007-07-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 35% magnetocurrent with spin transport through Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767198
10.1063/1.2767198
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