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(Color online) Schematic illustration of the Si spin transport device used in this work (a) and associated conduction band diagram (b). The vertical structure (top to bottom) is undoped -Si. Spin-polarized hot electrons are injected by an emitter voltage from the tunnel junction cathode through the normal-metal anode base and into the conduction band of the thick undoped Si drift layer forming injected current . Detection on the other side is with spin-dependent hot-electron transport through the thin film. Our spin transport signal is the ballistic current transported into the conduction band of the collector .
(Color online) (a) In-plane spin-valve effect for our silicon spin transport device with emitter tunnel junction bias and at , showing magnetocurrent. (b) Spin precession and dephasing (Hanle effect), measured by applying a perpendicular magnetic field.
(Color online) (a) In-plane spin-valve effect for the device with emitter bias and at , with magnetocurrent ratio reduced to . (b) for parallel (P) and antiparallel (AP) injector/detector magnetization configurations (open symbols and right axis), and the derived lower bound to electron spin polarization in the conduction band of Si (closed symbol and left axis).
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