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Low resistivity Ga-doped ZnO thin films of less than thickness prepared by ion plating with direct current arc discharge
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10.1063/1.2767213
/content/aip/journal/apl/91/5/10.1063/1.2767213
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767213
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical XRD scan profile of the GZO film with a thickness of . The diffraction intensity on the vertical axis is expressed in a logarithmic scale. The inset shows the full width at half maximum of (0002) -scan rocking curve as a function of film thickness below .

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM image of the GZO film with a thickness of . A single column is indicated by a broken line.

Image of FIG. 3.
FIG. 3.

Resistivity, carrier concentration, and Hall mobility of GZO films as a function of film thickness in the range from .

Image of FIG. 4.
FIG. 4.

Lattice parameters of and axes in GZO films as a function of film thickness below . These parameters are determined by the analysis of in-plane and out-of-plane XRD peak profiles. The volume of the crystallographic unit cell, calculated with the lattice parameters, is also shown.

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/content/aip/journal/apl/91/5/10.1063/1.2767213
2007-08-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low resistivity Ga-doped ZnO thin films of less than 100nm thickness prepared by ion plating with direct current arc discharge
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767213
10.1063/1.2767213
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